IBM and Samsung have made a new semiconductor technology chip that will extended battery life for phones. Transistors can be stacked vertically on these chips instead of lbeing laid flat horizontally on top reported The Verge
The new Vertical Transport Field Effect Transistor (VTFET) allows for current to pass up and down the vertical stack of transistors, instead of flowing side-by-side in the former technology. Intel is also working on stacking chip components since it's easier to add more chips vertically than horizontally.
IBM and Samsung are claiming that the VTFET will have a “two times improvement in performance or an 85 per cent reduction in energy use" in comparison to FinFET technology. The two companies went as far as to add that “cell phone batteries that could go over a week without being charged, instead of days", less energy required for Crypto-mining or data encryption, and powerful IoT devices, or spacecraft.
IBM has already showcased its first 2nm chip earlier this year which crammed more transistors up to fit onto a chip and used the FinFET design. The VTFET design chip would not be available to Samsung and IBM for a while, though other companies have also joined on the bandwagon to set up chip factories. Intel introduced its RibbonFET design this summer, successor of the FinFET technology.
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